savantic semiconductor product specification silicon pnp power transistors 2SB1273 d escription with to-220 package low collector saturation voltage applications designed for use in low frequency power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -60 v v ceo collector- emitter voltage open base -60 v v ebo emitter-base voltage open collector -6 v i c collector current -3 a i cm collector current-peak -8 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SB1273 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-5ma ,r be = : -60 v v (br)cbo collector-base breakdown voltage i c =-1ma ,i e =0 -60 v v (br)ebo emitter- base breakdown voltage i e =-1ma ,i c =0 -6 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -0.4 -1.0 v v be base-emitter on voltage i c =-0.5a ; v ce =-5v -0.8 -1.0 v i cbo collector cut-off current v cb =-40v; i e =0 -100 a i ebo emitter cut-off current v eb =-4v; i c =0 -100 a h fe-1 dc current gain i c =-0.5a ; v ce =-5v 70 280 h fe-2 dc current gain i c =-3a ; v ce =-5v 20 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 60 pf f t transition frequency i c =-0.5a ; v ce =-5v 100 mhz h fe-1 classifications q r s 70-140 100-200 140-280
savantic semiconductor product specification 3 silicon pnp power transistors 2SB1273 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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